When Cr less than 17 at%, in-plane magnetization dominates, while beyond Cr 11.2 at%, a few amount of perpendicular magnetization dot domains appeared and increased as Cr at% increased. 当Cr含量少于17at%时,面内磁化强度为主,并有多种结构形式。超过Cr含量11.2at%后,少量的垂直磁化强度点畴出现,并随Cr含量增多而增多。
Theoretical Study on the Selection of Head-Medium Parameters for Readout Process of Isolated Perpendicular Magnetization for Single-Layer-Medium with Ring-Type Head 单层膜垂直磁记录环形头读出时头盘结构参数选择方法的理论研究
The X-ray diffraction data show that the enhancement of coercivity and improvement of S and S should be attributed to the favorable film growth along the orientation perpendicular to the magnetization axis by introducing Cr or CrTi underlayer in the media. X射线衍射表明在介质中引入Cr和CrTi底层,由于薄膜能更好的沿着垂直于易磁化轴方向生长而使介质性能提高。
The Study on Selective Evaporation and Perpendicular Magnetization Films of CoCr CoCr的选择蒸镀和垂直磁化膜的研究
This paper studies the magnetic domains of CoCr perpendicular magnetization films vary with temperature variation. 本文研究了CoCr垂直磁化薄膜的磁畴随温度的变化。
High Resolution Microscopy Study on the Co-Cr Perpendicular Magnetization Films 钴铬垂直磁化膜的高分辨显微学研究
The change in Magnetic properties of the Fe/ Y multilayer film after Ar ion mixing was studied. It have been found that the as deposited film of shorter periodicity are paramagnetic, and the perpendicular and in plane magnetization is the same. 研究了Ar+混合Fe/Y多层膜引起的磁性变化,结果表明:短周期膜沉积态呈顺磁性,随注入剂量增加,膜由顺磁向铁磁转变,磁化强度Ms和矫顽力Hc也相应增大。
When using electron beam evaporates CoCr for preparing perpendicular magnetization films, it is found that the content of the film is influenced by many factors, and it is the most important problem for obtaining perpendicular magnetization for the CoCr films. 用电子束蒸镀CoCr制备垂直磁化膜时发现膜成分受众多因素影响,而成为CoCr膜实现垂直磁化的首要问题。
Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM 磁随机存储器中垂直电流驱动的磁性隧道结自由层的磁化翻转